Bc635 datasheet pdf storage

Apr 06, 2019 bd datasheet, bd pdf, bd data sheet, bd manual, bd pdf, bd, datenblatt, electronics bd, alldatasheet, free, datasheet, datasheets, data sheet. Operating and storage junction temperature range tj, tstg. Storage temperature range collectorbase voltage thermal resistance junction ambient1. The macromodel for the diamond transistor opa gives an example of thecharacteristics, while remaining simple enough to ensure fast simulations. Datasheet identification product status definition advance information formative or in.

Motorola order this document semiconductor technical data by bc635 d high current transistors bc635 npn silicon bc637 bc639 collector 2 3 base 1 emitter 1 maximum ratings 2 3 bc bc bc 635 637 639 rating symbol unit case 2904, style 14 to92 to226aa collectoremitter voltage vceo 45 60 80 vdc collectorbase voltage vcbo 45 60. Bc639 45 60 100 v v v vceo collectoremitter voltage. Bc635637 639 npn epitaxial silicon transistor switching and amplifier applications complement to bc635638640 absolute maximum ratings t a 25 c pw5m s, duty cycle10% electrical characteristics t a 25 c characteristic symbol rating unit collector emitter voltage. Bc635 datasheet, bc635 pdf, bc635 pinout, equivalent, replacement silicon planar epitaxial transistors cdil, schematic, circuit, manual. Package dimensions bc635637639 dimensions in millimeters 2002 fairchild semiconductor corporation rev. All specifications subject to change without notice. Bc635637639 npn epitaxial silicon transistor created date. Bc635 637639 npn epitaxial silicon transistor created date. Specifications may change in any manner without notice. Bc635 bc637 bc639 pd ta 25c pd tc 25c soa 1s pd tc 25c pd ta 25c 500 200 100 50 20 1 3 5 10 30 50 100 300 500 ic, collector current ma figure 2. Semiconductor data sheets andor specifications can and do vary in different applications and actual.

The datasheet is printed for reference information only. We have engaged in the electronic components industry over 10 years. Toshiba fet silicon n channel mos typefor high speed, high voltage switching, alldatasheet. Bc637 datasheet, equivalent, cross reference search. Maximum ratings applied to the device are individual stress limit values not normal operating conditions and are not valid simultaneously. St bc635 bc637 bc639 npn silicon epitaxial planar transistor medium power transistors for driver. Bc639 datasheet, bc639 pdf, bc639 data sheet, bc639 manual, bc639 pdf, bc639, datenblatt, electronics bc639, alldatasheet, free, datasheet, datasheets, data sheet. Bc635637pcicpcipmc time and frequency processor revision k users guide 85000096 october, 2003. Bc635 datasheet pdf pinout npn silicon epitaxial planar.

Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Free devices maximum ratings rating symbol value unit collector. Motorola order this document semiconductor technical data by bc635d high current transistors bc635 npn silicon bc637 bc639 collector 2 3 base 1 emitter 1 maximum ratings 2 3 bc bc bc 635 637 639 rating symbol unit case 2904, style 14 to92 to226aa collectoremitter voltage vceo 45 60 80 vdc collectorbase voltage vcbo 45 60 80 vdc emitterbase. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements. Bc635637639 npn epitaxial silicon transistor mouser electronics. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. These interrupts can be used to synchronize applications on the host computer as well as signal specific events.

This datasheet contains the design specifications for. Bc635 datasheet, equivalent, cross reference search. Bc639npn datasheetpdf 1 page continental device india limited. Bc639 45 60 80 v v v vebo emitterbase voltage 5 v ic collector current 1 a icp peak collector current 1. Tstg storage temperature range soldering temperature, for 10 seconds 300 1. General description npn generalpurpose transistors in a small sot23 to236ab, very small sot323 sc70 or ultra small sot883 dfn10063 surfacemounted device smd plastic package. Bc635637639 npn epitaxial silicon transistor solo electronica.

Storage temperature v cer v ces v ceo v ebo ic icp ib p c t j t stg 45 60 100 45 60 100 45 60 80 5 1 1. Quick reference data symbol parameter conditions min typ max unit. Dc current gain vce 2 v 500 300 100 50 20 1 10 100 ic, collector current ma figure 3. May 09, 2020 bu2525af datasheet pdf buaf transistor datasheet pdf, buaf equivalent. Bc847 series 45 v, 100 ma npn generalpurpose transistors rev. The nellcor pulse oximetry system with oximax technology establishes a new milestone in patient safety monitoring that can impact clinical settings from the everyday to the extraordinary. Dec 22, 2019 b1020 datasheet pdf storage storage proper storage until installed keep unit in a dry, temperature controlled area. Symmetricoms bc635637pmc receiver module provides precision time and frequency reference to the host computer system and peripheral data acquisition systems. Bc635637639 npn epitaxial silicon transistor farnell. Switching regulator is a unique hybrid transistor circuit, specifically designed, constructed and specia, p c635 636 637 typ.

Bc639 npn medium power transistors product specification 2001 oct. Collectorbase breakdown voltage bf721 v brcbo300 v i c10a, i e0 collectoremitter breakdown voltage bf721 v brceo300 v i c1ma, i b0 emitterbase. Elektronische bauelemente bc635 bc637 bc639 npn type plastic encapsulated transistor feature. C unless specified otherwise description symbol test condition max unit dc current gain h fe v ce2v, i c5ma v ce2v, i c150ma bc635bc636 250 bc637bc638 160 bc639bc640 160 group10 160 group16 250 v ce2v. Npn silicon af transistors bc 635 datasheet catalog. Type number1 package pnp complement nxp jeita jedec bc6352 sot54 sc43a to92 bc636 bcp54 sot223 sc73 bcp51 bcx54 sot89 sc62 to243 bcx51 table 2. Bc635 45 collector to base voltage bc637 60 bc639 vcbo 100 v bc635 45 collector to emitter voltage bc637 60 bc639 vceo 80 v emitter to base voltage vebo 5 v continuous collector current ic 1 a collector power dissipation pc 830 mw junction, storage temperature tj, tstg 150, 65150 c. Data sheet pure storage flasharrayx accelerate core applications and provide a modern data experience. Bc635 transistors datasheet pdf encapsulate transistors. Pdf pic625 pic626 pic627 pic635 pic636 pic637 100khz transistor c635. Bc635, bc637, bc639, bc63916 high current transistors. Bc337, bc33725, bc33740 amplifier transistors npn silicon features these are pb. Bc637 high current npn transistors on semiconductor.

Time is acq u ir ed f om th gps sl ng a supplied antennareceiver bc637pmc only or from time code signals, typically irig b. Bc635d bc635, bc637, bc639, bc63916 high current transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage bc635 bc637 bc639 vceo 45 60 80 vdc collectorbase voltage bc635. Bc635 bc637 bc639 bc636 bc638 bc640 collector emitter voltage 45 60 80 v collector base voltage 45 60 80v emitter base voltage 5. Bc635 datasheet, bc635 pdf, bc635 pinout, equivalent, replacement npn silicon epitaxial planar transistor semtech, schematic, circuit, manual. Bcx54 45 v, 1 a npn medium power transistor series rev. This datasheet contains preliminary data, and supplementary data will be published at a later date. Bc635 datasheet pdf pinout silicon planar epitaxial. Storage temperature v cer v ces v ceo vebo ic icp ib p c t j t stg45601004560100456080511.

Npn silicon af transistors high current gain high collector current 3. Datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. Npn silicon af transistors high current gain high collector current 2. Applications datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Bc639 npn medium power transistors 1999 apr 23 product specification supersedes data of 1997 mar 12 philips semiconductors product specification npn medium power transistors bc635. C operating and storage junction temperature range. Bc635 datasheet, bc635 pdf, bc635 data sheet, bc635 manual, bc635 pdf, bc635, datenblatt, electronics bc635, alldatasheet, free, datasheet, datasheets, data sheet. Silicon planar epitaxial transistors bc635, 637, 639 npn bc636, 638, 640 pnp to92 plastic package electrical characteristics ta25. Bc636ta pnp epitaxial silicon transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Formative or in design first production full production. Npn silicon af transistors high current gain high collector current select the part name and then. Bc636638 640 pnp epitaxial silicon transistor switching and amplifier applications complement to bc635637639.